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| 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features * * * * * * * Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings -120 -140 -160 15 -7 -7 100 150 -55 to +150 Unit V V A A W C C 2 2SJ160, 2SJ161, 2SJ162 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX -120 -140 -160 15 -0.15 -- 0.7 -- -- -- -- -- Typ -- -- -- -- -- -- 1.0 900 400 40 230 110 Max -- -- -- -- -1.45 -12 1.4 -- -- -- -- -- Unit V V V V V V S pF pF pF ns ns VDD = -20 V, ID = -4 A I G = 100 A, VDS = 0 I D = -100 mA, VDS = -10 V I D = -7 A, VGD = 0*1 I D = -3 A, VDS = -10 V*1 VGS = 5 V, VDS = -10V, f = 1 MHz Test conditions I D = -10 mA , VGS = 10 V 3 2SJ160, 2SJ161, 2SJ162 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) -20 Ta = 25C -10 Drain Current ID (A) 100 ID max (Continuous) PW (-14.3 V, -5 -7 A) = 10 0 m Maximum Safe Operation Area PW DC = e Op 10 ms ra -2 -1.0 -0.5 s( tio (1 1 n Sh Sh = (T C ot) ot ) 25 C 50 (-120 V, -0.83 A) ) (-140 V, -0.71 A) (-160 V, -0.63 A) 2SJ160 2SJ161 2SJ162 0 50 100 Case Temperature TC (C) 150 -0.2 -5 -10 -20 -50 -100 -200 -500 Drain to Source Voltage VDS (V) Typical Output Characteristics -10 TC = 25C -1.0 -0.8 Drain Current ID (A) Typical Transfer Characteristics 25 C 25 75 Drain Current ID (A) -8 -7 -6 -6 -5 -0.6 -4 -4 -3 Pch -0.4 = 10 0W -2 -2 -1 V VGS = 0 -0.2 0 -10 -30 -40 -20 -50 Drain to Source Voltage VDS (V) 0 -0.4 -1.2 -1.6 -2.0 -0.8 Gate to Source Voltage VGS (V) 4 T C =- -8 -9 VDS = -10 V 2SJ160, 2SJ161, 2SJ162 Drain to Source Saturation Voltage VDS (sat) (V) Drain to Source Saturation Voltage vs. Drain Current -10 -5 Drain to Source Voltage VDS (V) VGD = 0 Drain to Source Voltage vs. Gate to Source Voltage -10 75 25 TC =- -8 -6 -5 25 C -2 -1.0 -0.5 -2 ID = -1 A 0 -5 -10 -2 -6 -8 -4 -10 Gate to Source Voltage VGS (V) -2 -4 -0.2 -0.1 -0.1 -0.2 -0.5 -1.0 -2 Drain Current ID (A) Input Capacitance vs. Gate to Source Voltage Forward Transfer Admittance yfs (S) 1,000 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k TC = 25C VDS = -10 V ID = -2 A 30 k 100 k 300 k 1 M Frequency f (Hz) Input Capacitance Ciss (pF) Forward Transfer Admittance vs. Frequency 500 200 VDS = -10 V f = 1 MHz 100 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 3M 10 M 2SJ160, 2SJ161, 2SJ162 Switching Time vs. Drain Current 500 Switching Time ton, toff (ns) 200 100 50 20 10 5 -0.1 -0.2 ton toff -0.5 -1.0 -2 Drain Current ID (A) -5 -10 Switching Time Test Circuit Output RL Input Input 10% Waveforms 90% ton PW = 50 s duty ratio = 1% -20 V 50 Output 10% 90% toff 6 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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